3D NAND Flash Memory Market Synopsis
As per the analysis by Market Research Future Reports (MRFR), the global 3D NAND Flash Memory Market was initially valued at USD 10.56 billion in 2018 and is estimated to attain USD 62 billion by the end of the review period with a CAGR of 30%.
The demand for data storage in consumer electronics and enterprise storage sectors has resulted in the expansion of the global 3D NAND memory market 2020. Moreover, demand for making chips smaller in size and semiconductor wafer has also motivated the producing expense incurred in the design and advancement of 3D NAND memory may act as an obstruction in the growth of the global 3D NAND market. Additionally, the producers of 3D NAND memory chips may face some hurdles in the forthcoming period due to the development in technologies such as 3D XPoint (used in today’s era), solid-state storage (SSS), resistive random access memory (RRAM), and phase-change memory (PCM).
The organizations functioning in the 3D NAND memory market pays attention to the advancement of reliable designs, and they generally compete based on cost, technology, product quality in the 3D NAND market. The implementation of 3D NAND in various enterprises, logistics applications, transportation has motivated the manufacturers to stay updated and ahead with the techniques, and offer its consumers with advanced flash memory solutions.
3D NAND Flash Memory Market Key Players
The forefront players in the global 3D NAND memory market are Delkin Devices (US)., Toshiba Corporation (Japan), SAMSUNG (South Korea), Western Digital Corporation (US), Intel Corporation (US), Micron Technology, Inc. (the US), SK HYNIX INC. (South Korea), Macronix International Co., Ltd (Taiwan), Applied Materials, Inc. (US), Yangtze Memory Technologies Co., Ltd (YMTC) (China). Delkin Devices (US). These enterprises are studied based on their regional presence, product portfolio, origin, key developments, and proficiency in the 3D NAND memory solutions. Apart from the organization mentioned above, Panasonic Corporation (Japan), Transcend Information, Inc. (the US), Cypress Semiconductor Corporation (US), Hitachi High-Technologies Corporation (Japan), and also have a significant presence in the global 3D NAND memory market.
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The global 3D NAND memory market has been classified into the application, vertical, type, and region.
On the basis of application, the global 3D NAND memory market has been classified into the flash card, SSD, USB, tablet, smartphone, kiosk, and others.
On the basis of vertical, the global 3D NAND memory market has been classified into IT & Telecommunication, transportation, aerospace & defense, retail, healthcare, and others.
On the basis of type, the global 3D NAND memory market has been classified into a triple-level cell (TLC), multi-level cell (MLC), and quad-level cell (QLC).
On the basis of region, the global 3D NAND memory market has been classified into Asia-Pacific, North America, the Middle East & Africa, Europe, and Central & South America.
The global market for 3D NAND memory is likely to expand tremendously during the forecast period from 2019 to 2025. As per the analysis, the geographic study of the 3D NAND memory market has been performed for Europe, Asia Pacific, North America, the Middle East & Africa, and Central and South America.
According to the research, the APAC region is expected to lead the global 3D NAND memory market. The second position is attained by North America, followed by Europe and the Rest of the World (RoW). The rising demand for lightweight memory chips and durable, to a great extent, in enterprise storage and automotive applications have motivated the adoption of 3D NAND memory in the region. Additionally, the existence of semiconductor producing facilities in China has resulted in the expansion of the global 3D NAND memory market.